발간년도 : [2023]
| 논문정보 |
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| 논문명(한글) |
[Vol.18, No.5] Analysis for Far-End Crosstalk among Quadruple-Coupled Microstrip Lines |
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| 논문투고자 |
Yong-Jin Kim |
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| 논문내용 |
Semiconductors are integrated into all digital devices and their importance has grown not only in determining the quality of products but also due to competition between countries. Currently, the semiconductor industry faces intense competition in implementing nanometer-scale fine processes with high added value. Particularly, in microwave integrated circuits (MMIC) utilizing these semiconductor fine processes, transmission lines are implemented for internal wiring or interconnections in circuits used for signal transmission. The transmission lines used in MMIC are microstrip structures that carry high frequencies ranging from several GHz to THz, making it impossible to ignore the electromagnetic effects between neighboring transmission lines. Researchs on the electromagnetic effects between microstrip transmission lines have been conducted for a long time, and through such studies, the design of the spacing between transmission lines has become a basis for minimizing the electromagnetic impacts on signal transmission performance. However, future RF semiconductor components in 5G communication systems operating in the mmWave band and AI smart devices require even greater integration, necessitating narrower spacing between transmission lines. This paper analyzes the far-end crosstalk characteristics in four multiple transmission lines using magneto-dielectric materials. By leveraging the crosstalk reduction effect of magneto-dielectric materials, this research aims to improve the performance of transmission lines and provide a foundation for implementing highly integrated circuits in the upcoming next-generation (above 6GHz) communication and AI era's wide-bandwidth devices. |
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